ds30422 rev. 3 - 2 1 of 6 www.diodes.com dcx (xxxx) h ? diodes incorporated dcx (xxxx) h dcx (xxxx) h complementary npn/pnp pre-biased small signal dual surface mount transistor features ? epitaxial planar die construction ? built-in biasing resistors ? lead free by design/rohs compliant (note 2) ? "green" device (note 3 and 4) mechanical data ? case: sot-563 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.005 grams (approximate) p/n r1 r2 marking dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH dcx143th dcx114th 22k 47k 4.7k 10k 2.2k 10k 4.7k 10k 22k 47k 4.7k 47k 47k 10k ? ? c17 c20 c08 c14 c06 c13 c07 c12 sot-563 dim min max typ a 0.15 0.30 0.25 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.56 0.60 0.60 l 0.15 0.25 0.20 m 0.10 0.18 0.11 all dimensions in mm a m l b c h k g d cxx ym new pp r ucr uc od t t od r 1 r 1 r 2 r 2 r 1 r 1 maximum ratings npn s ection @t a = 25c unless otherwise specified r 1 , r 2 r 1 only schematic diagram, top view characteristic symbol value unit supply voltage v cc 50 v input voltage dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH dcx143th dcx114th v in -10 to +40 -10 to +40 -10 to +30 -6 to +40 -5 to +12 -10 to +40 -5v max -5v max v output current dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH dcx143th dcx114th i o 30 30 100 70 100 50 100 100 ma output current all i c (max) 100 ma power dissipation (total) p d 150 mw thermal resistance, junction to ambient air (note 1) r ja 833 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. mounted on fr4 board with recommended pad layout at http://www.dio des.com/datas heets/ap02001.pdf. 2. no purposefully added lead. 3. diodes inc.'s "green" policy can be found on our webs ite at http://www.diodes.com /products/lead_free/index.php. 4. product manufactured with date code uo (week 40, 2007) and newer are built with green molding compound. product manufacture d prior to date code uo are built with n on-green molding compound and may contain halogens or sb2o3 fire retardants.
ds30422 rev. 3 - 2 2 of 6 www.diodes.com dcx (xxxx) h ? diodes incorporated new product maximum ratings pnp section @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc 50 v input voltage dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH dcx143th dcx114th v in +10 to -40 +10 to -40 +10 to -30 +6 to -40 +5 to -12 +10 to -40 +5v max +5v max v output current dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH dcx143th dcx114th i o -30 -30 -100 -70 -100 -50 -100 -100 ma output current all i c (max) -100 ma power dissipation (total) p d 150 mw operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics npn section @t a = 25c unless otherwise specified characteristic (ddc143th & ddc114th only) symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 ? ? v i c = 50 a collector-emitter breakdown voltage bv ceo 50 ? ? v i c = 1ma emitter-base breakdown voltage bv ebo 5 ? ?? v i e = 50 a collector cutoff current i cbo ? ? 0.5 a v cb = 50v emitter cutoff current i ebo ? ? 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) ? ? 0.3 v i c /i b = 2.5ma / 0.25ma dcx143th i c /i b = 1ma / 0.1ma dcx114th dc current transfer ratio h fe 100 250 600 ? i c = 1ma, v ce = 5v gain-bandwidth product* f t ? 250 ? mhz v ce = 10v, i e = -5ma, f = 100mhz characteristic symbol min typ max unit test condition dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH v l(off) 0.5 0.5 0.5 0.3 0.5 0.5 1.1 1.1 1.1 ? ? 1.1 ? v v cc = 5v, i o = 100 a input voltage dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH v l(on) ? 1.9 1.9 1.9 ? ? 1.9 3.0 3.0 3.0 1.4 1.1 3.0 v o = 0.3v, i o = 5ma v o = 0.3v, i o = 2ma v o = 0.3v, i o = 20ma v o = 0.3v, i o = 1ma v o = 0.3v, i o = 5ma v o = 0.3v, i o = 10ma output voltage dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH v o(on) ? 0.1 0.3 v i o /i l = 10ma / 0.5ma i o /i l = 10ma / 0.5ma i o /i l = 10ma / 0.5ma i o /i l = 5ma / 0.25ma i o /i l = 5ma / 0.25ma i o /i l = 10ma / 0.5ma input current dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH i l ? ? 0.36 0.18 1.8 0.88 3.6 0.88 ma v i = 5v output current i o(off) ? ? 0.5 a v cc = 50v, v i = 0v dc current gain dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH g l 56 68 20 68 80 30 ? ? ? v o = 5v, i o = 5ma v o = 5v, i o = 5ma v o = 5v, i o = 10ma v o = 5v, i o = 10ma v o = 5v, i o = 10ma v o = 5v, i o = 5ma * transistor - for reference only
ds30422 rev. 3 - 2 3 of 6 www.diodes.com dcx (xxxx) h ? diodes incorporated new product electrical characteristics pnp section @t a = 25c unless otherwise specified characteristic (dcx143th & dcx114th only) symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 ? ? v i c = -50 a collector-emitter breakdown voltage bv ceo -50 ? ? v i c = -1ma emitter-base breakdown voltage bv ebo -5 ? ? v i e = -50 a collector cutoff current i cbo ? ? -0.5 a v cb = -50v emitter cutoff current i ebo ? ? -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) ? ? -0.3 v i c /i b = 2.5ma / 0.25ma dcx143th i c /i b = 1ma / 0.1ma dcx114th dc current transfer ratio h fe 100 250 600 ? i c = -1ma, v ce = -5v gain-bandwidth product* f t ? 250 ? mhz v ce = -10v, i e = 5ma, f = 100mhz characteristic symbol min typ max unit test condition dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH v l(off) -0.5 -0.5 -0.5 -0.3 -0.5 -0.5 -1.1 -1.1 -1.1 ? ? ?1.1 ? v cc = -5v, i o = -100 a input voltage dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH v l(on) ? -1.9 -1.9 -1.9 ? ? -1.9 -3.0 -3.0 -3.0 -1.4 -1.1 -3.0 v v o = -0.3v, i o = -5ma v o = -0.3v, i o = - 2ma v o = -0.3v, i o = -20ma v o = -0.3v, i o = -1ma v o = -0.3v, i o = -5ma v o = -0.3v, i o = -10ma output voltage dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH v o(on) ? -0.1 -0.3 v i o /i l = -10ma / -0.5ma i o /i l = -10ma / -0.5ma i o /i l = -10ma / -0.5ma i o /i l = -5ma / -0.25ma i o /i l = -5ma / -0.25ma i o /i l = -10ma / -0.5ma input current dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH i l ? ? -0.36 -0.18 -1.8 -0.88 -3.6 -0.88 ma v i = -5v output current i o(off) ? ? -0.5 a v cc = 50v, v i = 0v dc current gain dcx124eh dcx144eh dcx143eh dcx114yh dcx123jh DCX114EH g l 56 68 20 68 80 30 ? ? ? v o = -5v, i o = -5ma v o = -5v, i o = -5ma v o = -5v, i o = -10ma v o = -5v, i o = -10ma v o = -5v, i o = -10ma v o = -5v, i o = -5ma gain-bandwidth product* f t ? 250 ? mhz v ce = -10v, i e = -5ma, f = 100mhz * transistor - for reference only
ds30422 rev. 3 - 2 4 of 6 www.diodes.com dcx (xxxx) h ? diodes incorporated typical curves ? dcx143eh npn section 0.001 0.01 0.1 1 0 10 20 30 40 50 v, maxim u m c o lle c t o r v o l t a g e (v) ce(sat) i , collector current (ma) fig. 2 v vs. i c ce(sat) c i/i = 10 cb -25 c 75 c 25 c -50 050100 250 200 150 50 100 0 t , ambient temperature ( c) fig. 1 derating curve - total a 150 p , p o we r dissi p a t i o n (mw) d new product 10 1,000 100 1 11 0 h, d 1 0 0 c c u r r en t g ain (n o r malized) fe i , collector current (ma) fig. 3 dc current gain c v = 10 ce 0 1 2 3 4 0 20 30 c , c a p a c i t an c e (p f ) ob v , reverse bias voltage (v) fig. 4 output capacitance r 5 10 5 15 25 i = 0ma e 0.01 0.1 1 10 100 012 34 89 10 i, c o lle c t o r c u r r en t (ma) c v , input voltage (v) fig. 5 collector current vs. input voltage in 75 c 5 67 0.1 1 10 010203040 i , collector current (ma) fig. 6 input voltage vs. collector current c 50 v = 0.2 o v , input voltage (v) in -25c 25c 75 c
ds30422 rev. 3 - 2 5 of 6 www.diodes.com dcx (xxxx) h ? diodes incorporated typical curves ? dcx143eh pnp section 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maxim u m c o lle c t o r v o l t a g e (v) ce(sat) i , collector current (ma) fig. 7 v vs. i c ce(sat) c i/i = 10 cb -25 c 75 c 25 c 10 1,000 100 1 11 0 h, d 1 0 0 c c u r r e n t g ai n ( n o r malized) fe i , collector current (ma) fig. 8 dc current gain c v = 10 ce new product 0 2 4 6 10 0 20 30 c , c a p a c i t an c e (p f ) ob v , reverse bias voltage (v) fig. 9 output capacitance r 12 10 5 15 25 8 i = 0ma e 0.01 0.1 1 10 100 012 34 89 10 i, c o lle c t o r c u r r e n t (ma) c v , input voltage (v) fig. 10 collector current vs. input voltage in 5 67 v = 5v o 0.1 1 10 010203040 i , collector current (ma) fig. 11 input voltage vs. collector current c 50 v = 0.2 o v , input voltage (v) in
ds30422 rev. 3 - 2 6 of 6 www.diodes.com dcx (xxxx) h ? diodes incorporated ordering information (note 5) new product device packaging shipping dcx124eh-7 sot-563 3000/tape & reel dcx144eh-7 sot-563 3000/tape & reel dcx143eh-7 sot-563 3000/tape & reel dcx114yh-7 sot-563 3000/tape & reel dcx123jh-7 sot-563 3000/tape & reel DCX114EH-7 sot-563 3000/tape & reel dcx143th-7 sot-563 3000/tape & reel dcx114th-7 sot-563 3000/tape & reel notes: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information cxxym cxx = product type marking code (see page 1) ym = date code marking y = year ex: p = 2003 m = month ex: 9 = september date code key year 2006 2007 2008 2009 2010 2011 2012 code t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated.
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